(China (Mainland))
Product Summary
The APT10050JN is an N-Channel enhancement mode high voltage power MOSFET.
Parametrics
APT10050JN absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 1000V; (2)ID, Continuous Drain Current @ TC = 25℃: 25A; (3)IDM, lLM, Pulsed Drain Current 1 and Inductive Current Clamped: 82A; (4)VGS, Gate-Source Voltage: ±30V; (5)PD, Total Power Dissipation @ TC = 25℃: 520W; (6)TJ,TSTG, Operating and Storage, Junction Temperature Range: -55 to 150℃; (7)TL, Lead Temperature: 0.063" from Case for 10 Sec: 300℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 APT10050JN |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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APT1001R1AN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1AVR |
Other |
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Data Sheet |
Negotiable |
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APT1001R1BN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1BVFR |
Other |
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Data Sheet |
Negotiable |
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APT1001R1HN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1HVR |
Other |
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Data Sheet |
Negotiable |
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