(China (Mainland))
Product Summary
The N-Channel HEXFET power MOSFET IRF1902TRPBF from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of the IRF1902TRPBF provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, the IRF1902TRPBF can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
Parametrics
IRF1902TRPBF absolute maximum ratings: (1)VDS, Drain- Source Voltage: 20 V max; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ 4.5V: 4.2 A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ 4.5V: 3.4 A; (4)IDM, Pulsed Drain Current: 17A; (5)PD @TA = 25℃, Power Dissipation: 2.5 W; (6)PD @TA = 70℃, Power Dissipation: 1.6w; (7)Linear Derating Factor: 0.02 mW/℃; (8)VGS, Gate-to-Source Voltage: ± 12 V; (9)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRF1902TRPBF features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Lead-Free.
Diagrams
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 IRF1902TRPBF |
International Rectifier |
MOSFET MOSFT 20V 4.2A 85mOhm 5nC |
Data Sheet |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
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IRF1010EL |
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MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
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IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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